Technical Solutions
Focusing on 6-inch and 8-inch legacy processes to solve hardware and process challenges on AMAT and Lam Research platforms.
6-8 Inch Legacy Technology Expertise
We specialize in solving unique hardware aging and new material transition (SiC, GaN) challenges in 6-inch (150mm) and 8-inch (200mm) mature node environments.
Critical Technical Challenges & FabOptima Solution Matrix
| Platform (OEM) | Process | Critical Pain Point | FabOptima Value Proposition |
|---|---|---|---|
| AMAT Producer | PECVD | Twin Chamber Matching Yield loss due to film quality/thickness mismatch between A/B chambers | QuickMatch Maximize CpK with precision heater/gas flow calibration hardware and software tuning |
| Lam Kiyo / Flex | Etch | SiC Micro-trenching & Wear Bottom curvature and part wear from high-energy plasma during SiC etching | Recipe & Parts Reduce CoC by optimizing bias pulsing recipes and applying durable (Yttria/SiC) parts |
| AMAT Centura Epi | Epitaxy | Thermal Stress & Slip Wafer slip and crystal defects during high-temperature SiC growth | Thermal Tuning Support high-quality Epi growth with multi-zone temperature control and injector tuning |
| Lam Altus / Endura | CVD/PVD | Particle & Flaking Particle contamination from chamber wall flaking during metal deposition | Clean Strategy Optimize in-situ clean recipes and apply shield surface treatment technologies |
CVD Chamber Matching
The "Twin Chamber" structure of the Producer platform suffers from inherent impedance and conductance mismatches. Our QuickMatch™ algorithm and hardware kit resolve specific issues:
- A/B Side Uniformity: Reducing thickness variation to <1% (1-sigma).
- RF Impedance Tuning: Custom matching network calibration to equalize plasma density.
- Heater Retrofit: Enhanced zone control for stress management in thick 3D films.
8-Axis Health Radar
Precision Matching Analysis for A/B Chambers
SVID Deviation Heatmap
In-situ SVID Monitoring for Etch Process Drift
SiC Trench Etch
Silicon Carbide (SiC) is notoriously difficult to etch due to its high bond energy. We provide process recipes and hardware mods for deep trench MOSFETs.
- Micro-trenching Elimination: Bias pulsing recipes to prevent subs-trenching.
- Extended Part Life: Yttria-coated focus rings to withstand high-energy plasma erosion.
- Selectivity Control: Optimized gas ratios (SF6/O2) for max mask selectivity.
SiC Retrofit & Thermal Management
Transitioning a silicon line to SiC requires more than just process tuning. 1600°C growth and SiC-specific 'Thermal Mismatch' cause extreme wafer bowing and handling failures.
- Growth Stage Management: Optimizing Top-Bottom temperature gradients at 1600°C to suppress initial deformation.
- Quenching Control: Variable cooling sequences to prevent stress lock-in during rapid temperature drops.
- Bow-Aware Sensing: Precision IR/Ultrasonic mapping systems designed for heavily bowed transparent SiC wafers.
Epi Process Temperature Recipe
Wafer Bowing vs. Process Time
Thermal Mismatch Analysis: SiC vs. Epi-Layer Stress Accumulation
Want to see the full technical breakdown?
Download our Technical White Paper for in-depth analysis on yield optimization and legacy fab ROI.
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